ap
An International Peer Reviewed Research Journal
AJP
SSN : 0971 - 3093
Vol 1 9, No. 2 & 3 , April-September, 2010
Asian
Journal of Physics
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Volume 19
Numbers 2 & 3
2010
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Special
issue
on
Physical Deposition
of
Thin Films and
Nanostructures
Edited By
S K Gupta
Shashwati Sen
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Editorial
Vol 19, Nos 2 & 3, April-Sept 2010
In recent years considerable research effort has been focoused on Min films and nanostructures because of new phenomenon displayed by them, as well as their growing applications in electronic, optical, optoelectronic, magnetic. sensor and other devices. Thin films have been at the forefront of techniques that have enabled revolution in electronic device technology and development of nanomaterials is expected to enable continued progress in electronics and other device applications. Importance of thin films and nanomaterials arises from their small size and novel properties arising from reduced dimensionality and their non-equilibrium structures and phases. As an example thin films and superlattices have led to discovery of Giant magnetoresistance (GMR), Tunnel magnetoresistance (TMR) and quantum Hall efect. Of various techniques available for the growth of thin films and nano-structures, physical deposition techniques are of significant importance, as these yield controlled growth of materials with high purity and with possibility of wide variation in growth conditions.
Molecular beam epitaxy is one most important techniques used for the growth of thin films. nanostructures and multilayers. This technique allows acute control over thickness and deposition rate which are important for the growth of high quality heterostructure and quantum devices. Other physical vapour deposition techniques employed for growth of thin films and nanostructures are thermal and e-beam evaporation, sputtering, pulse laser deposition (PLD) and inert gas condensation technique etc.
This special
issue of Asian Journal of Physics will focus on
Physical deposition of thin films and nano-structures from the
point of preparation, characterisation and applications.
Characterisation techniques such as atomic force microscopy,
transmission electron microscopy, Optical and magnetic
characterisation and diverse applications of these materials will
be discussed.
S K Gupta
Shashwati Sen
S K Gupta
Shashwati Sen
Technical Physics Section,
Bhabha
Atomic Research Centre,
Mumbai-400
085, India
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 109-124
Soft x-ray multilayer by ion beam sputtering process
A Biswas*, D Bhattacharyya and N K Sahoo
Applied Spectroscopy Division, Bhabha Atomic Research Centre, Mumbai – 400 085, India
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An Ion Beam Sputtering system, which uses a commercial ECR microwave based plasma ion source, has been fabricated indigenously for deposition of W/Si soft X-ray multilayer devices. Initially, W, Si single layer thin films and W/Si/W tri-layer samples have been deposited on c-Si substrates at different Ar+ ion energies. The films have been characterized by specular and diffused Grazing Incidence X-ray Reflectivity (GIXR) and Spectroscopic Ellipsometry (SE) techniques to find out thickness and roughness of the individual layers for the single layer samples and interface roughness and interface diffusion for the tri-layer samples. Finally with the optimized ion energy, several W/Si multilayer devices upto 25-layer have been fabricated for application in soft X-ray wavelength < 150 Å and for 30º grazing angle of incidence and have been characterised.
Keywords: IBS, GIXR, SE
Total Refs : 42
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 125-140
Optical properties and microstructure evolution in electron beam
co-deposited
composite hafnia-silica thin films
N K Sahoo, N M Kamble, R B Tokas, S Thakur and A Biswas
Applied Spectroscopy Division, Bhabha Atomic Research Centre
Trombay,
Mumbai 400 085, India
____________________________________________________________________________________________________________________________________
Composite
hafnia-silica thin-films have generated significant interests for
the applications pertaining to the development of multilayer high
energy laser damage threshold multilayer coatings and high-k gate
oxides. In this work, the optical and microstructural properties of
these vapour phase mixed composite thin films achieved through
reactive electron beam co-depositions were probed by various
techniques, viz., ellipsometry, grazing incidence X-ray
reflectivity (GIXR), X-ray diffraction (XRD), atomic force
microscopy (AFM) and atomic force acoustic microscopy (AFAM). In
spite of different methodologies adopted in these techniques, the
optical and microstructural information obtained through
measurements have stunning resemblances. It was distinctly observed
that by adding a small fraction of silica (5-15%), it is possible
to dramatically improve the optical properties, density, grain
structure and morphologies in the composite oxide thin films
enhancing its application domain in multilayer and semiconductor
devices.
Total Refs : 33
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 141-146
Annealing effects on structural and electrical properties of Fe/Si
interface
Chhagan Lal, Renu Dhunna and I P Jain
Centre
for Non-conventional Energy Resources, University of Rajasthan,
Jaipur, 302004, India
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Fe films
of 80 nm thickness were deposited onto Si (111) substrate using
electron beam evaporation technique at 2 × 10–7 torr
vacuum. Samples were annealed in 3 × 10–5 torr vacuum at 500
and 600 °C temperatures for one hour for the formation of silicide
phases. GIXRD results have revealed the formation a stable FeSi2
disilicide at the interface on annealing at 600 °C temperature. The
Schottky Barrier Height (SBH) is calculated from I-V curves and
Norde method [F(V)-V]. It is concluded that the SBH decreases with
increasing the annealing temperature.
Total Refs : 36
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010)147-154
The growth and electrochemical properties of rf sputtered LiCoO2 thin film cathodes
P Jeevan Kumar, K Jayanth Babu and O M Hussain*
Thin Film
Laboratory, Department of Physics, Sri Venkateswara University,
Tirupati-517 502, India
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Thin films of LiCoO2 were grown by rf magnetron sputtering technique and the influence of deposition conditions on the growth, microstructural and electrochemical performance was studied. The LiCoO2 films deposited on metalized silicon substrates maintained at 523 K in an oxygen to argon ratio of 1:9 and subsequently annealed at 923 K exhibited (104) out of plane texture representing R3m structural symmetry with an average grain size of 500 nm. The Chronopotentiometry test performed on Pt/LiCoO2 aqueous cell with a current density of 160 µA/cm2 showed a discharge capacity of 113 µAh/cm2. Cyclic Voltammogram comprises of perfectly redox peaks at certainly very near voltage regions determines no drift in peak voltage and no change in internal resistance. These sputtered LiCoO2 films exhibited excellent electrochemical reversibility and can be used as a binder free cathode material in the fabrication of all solid state microbatteries. Total Refs : 22
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 155-186
Ion beam modification of magnetic thin films grown by physical
vapour deposition technique
J K Tripathi1,5, Sanjukta Ghosh1,6, Maciej Oskar Liedke2, A Kanjilal2, B Satpati3, A Gupta4, and T Som1,
1Institute of Physics, Sachivalaya Marg, Bhubaneswar-751 005, India
2Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf,
P.O. Box 510119, 01314 Dresden, Germany
3Center for Advanced Material Processing, Central Mechanical Engineering Research Institute,
Mahatma Gandhi Avenue, Durgapur - 713 209, India
4UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore – 452 017, India
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This review reports on the changes in structural and magnetic properties of Pt/Cr/Co multilayers and Co/Pt bi- and multi-layers modified under wide range of ion-energy, -species, and -fluences. We observe irradiation induced CoCrPt ternary alloy phase formation and CoPt ordered/disordered phase formation for Pt/Cr/Co and Co/Pt system, respectively. Phase formation is accompanied by an enhancement in the coercivity. These findings are explained in the light of ion beam induced recoil mixing and ionization events using TRIDYN_FZD and Monte Carlo SRIM simulations.
Keywords: Pt/Cr/Co multilayer, Co/Pt thin films, magnetic property, ion irradiation, coercivity, RBS
PACS:
61.80.Ac, 61.80.Jh, 75.70.Cn, 61.72.Cc, 82.80.Yc;
75.60.-d
Total Refs : 116
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 187-194
Thermally evaporated copper
phthalocyanine films for photovoltaic applications
R K Bedi, Himani Gupta, Rajan Saini and Aman Mahajan
1Material Science Laboratory, Department of Physics,Guru Nanak Dev University, Amritsar-143 005, India
2Department
of Applied Sciences, Amritsar College of Engineering &
Technology,
Amritsar-143 005, India
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Copper
phthalocyanine (CuPc) films have been prepared using thermal
evaporation technique onto glass substrate under different
experimental conditions. The samples have been studied for their
structural, optical and electrical properties. The X-ray
diffraction and SEM studies of these films show their crystalline
behaviour. The activation energy of the films found to lie in 0.44
– 0.85 eV. Analysis of optical absorption measurements on the films
indicates that the interband transitions energies lie in 4.12 –
4.14 eV. Devices have been fabricated under different experimental
conditions. The J-V relationship of single layer (Fluorine doped
tin oxide/CuPc/Aluminium) and double layer (Fluorine doped tin
oxide/Crystal violet/CuPc/Aluminium) devices are found to be in
good agreement with standard diode equation. The double layer
devices show comparatively higher power conversion
efficiency.
Total Refs : 17
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Asian Journal of Physics Vol. 19, Nos. 2 & 3, (2010) 195-208
Effect of
thermal oxidation temperature on electrical
properties
of
amorphous rutile TiO2 thin films
P Chowdhury*, Harish C Barshilia, K C Yogananda, and K S Rajam, Ayan Roy Chaudhuri and S B Krupanidhi
Surface Engineering Division, National Aerospace Laboratories, Bangalore-560 017, India
Material
Research Center, Indian Institute of Science, Bangalore-560 012,
India
____________________________________________________________________________________________________________________________________
Amorphous
TiO2 thin films were grown by thermal oxidation of sputter
deposited Ti thin films on n-type Si(100) substrates. Phase purity
of TiO2 thin films was confirmed by X-ray diffraction and
Raman spectroscopy. Secondary ion mass spectroscopy depth profiles
for the TiO2 thin films demonstrate uniformity of Ti and O
atoms and the inter-facial composition on Si surface. Metal oxide
semiconductor capacitors with Al top and bottom electrodes were
fabricated and both C-V and I-V characterization were carried out
to evaluate the effect of thermal oxidation temperature on
electrical properties of TiO2 thin films. High temperature
annealing at different temperatures from 480 to 740°C under
O2 ambient indicates that films oxidized at 580°C have low
trap and leakage current densities and can be treated as the
optimal oxidation temperature. Frenkel-Poole conduction was
observed for films prepared under optimal conditions, while for
other conditions, Schottkey emission was found to be the main
conduction mechanism.
Total Refs : 26
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 209-216
Role of central metal atom and chemisorbed oxygen in gas
sensing mechanism for
cobalt-phthalocyanine thin films
Arvind Kumar, Ajay Singh, A K Debnath, Soumen Samanta, D K Aswal, S K Gupta and J V Yakhmi
Technical Physics Division, Bhabha Atomic Research Center, Mumbai-400 085, India
____________________________________________________________________________________________________________________________________
Chlorine
(Cl2) gas sensing has been studied in polycrystalline
cobalt phthalocyanine (CoPc) thin films grown on sapphire substrate
by molecular beam epitaxy (MBE). By comparing the gas sensitivity
(at room temperature) in ambient and after annealing the films
under argon atmosphere we demonstrate that after desorption of
chemisorbed oxygen, the gas sensitivity strongly enhances. The
chemical interaction between Cl2 gas and CoPc has been
investigated by x-ray photoelectron spectroscopy, UV-visible
spectroscopy and impedance spectroscopy. It has been shown that
central metal atom of the CoPc molecules at the grain boundaries is
primarily responsible for oxidation on exposure to
Cl2.
Total Refs : 21
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 217-222
Effect of interface structures on the growth of Ag on Si(111) surfaces
Dipak K Goswami
Indian Institute of Technology Guwahati, Guwahati - 781 039, India
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Thin Ag films
of different thicknesses are grown on Si(111)-(7 × 7) surfaces at
room temperature and then annealed at 700ºC for 5 minutes. Ag films
morphology evolution upon annealing has been investigated by
scanning tunneling microscopy and interface structures are
characterized by reflection high energy electron diffraction
studies. Here we report the effect of interface structures on the
growth of Ag films.Ag islands formed on Si(111)-(7×7) surfaces at
room temperature with strongly preferred heights of even atomic
layers keeping (7× 7) reconstructed structure at the buried
interface unaltered. However, upon annealing interface structures
changes to (1 × 1) and Ag layer with single atomic layer heights
following the Si steps are observed.
Total Refs : 27
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 223-232
ECR plasma assisted growth of metal oxide
nanoparticles
Avinash S Bansode1, K R Patil2, S V Bhoraskar1 and V L Mathe1
1Department of Physics, University of Pune, Pune-411 007, India
2National Chemical Laboratory, Pune-411 008, India
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A new method
of synthesizing nanocrystalline particles of metal oxides on a flat
substrate by using chemical sputtering assisted by ECR plasma has
been explored. Langmuir double Probe method is used to carry out
the plasma diagnosis. Nanocrystalline particles of titanium dioxide
and iron oxide were grown on the glass substrate by depositing the
metals by ECR plasma and then oxidizing them at room temperature.
Nanocrystallites were seen to have different facetting depending on
the deposition conditions. Structural and morphological analyses
were carried out for understanding the characteristic
properties.
Total Refs : 22
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 233-238
Thin film of ternary transition metals in alloy form: Path to achieve very low vacuum
R K Sharma, Jagannath, Sovit Bhattacharya, S C Gadkari, R Mukund and V K Handu
Technical Physics Division, Bhabha Atomic Research Centre , Mumbai-400 085, India
____________________________________________________________________________________________________________________________________
Non
evaporable getter (NEG) thin film of TiVZr were deposited by
sputtering on ss substrates. After characterizing with surface
techniques, activation temperature of this alloy has been found in
the range of 160 – 180°C for 2 hrs heating with well defined
composition range. In this paper characterization of the activation
behavior of the NEG film has been reported. X-ray Photoelectron
Spectroscopy (XPS) technique provides the evolution of the chemical
composition of surfaces. TiVZr NEG films were deposited by
magnetron sputtering from a single TiZrV target. The NEG
performance and morphology dependence on deposition pressure,
sputtering conditions, and substrate surface roughness have been
investigated. Change in the surface morphology is depicted by
Scanning Electron Spectroscopy. Energy dispersive X-ray
spectroscopy provides the stoichiometry of the surfaces. However,
film topography and density were shown to depend very much on the
substrate surface roughness.
Total Refs : 10
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 239-244
Effect of thermal annealing on the formation of silicon nanoclusters in SiOX films grown by PLD
Nupur Saxena†, A Agarwal† and D Kanjilal+
†Department of Physics, Bareilly College, Bareilly-243 005, India.
+Inter University Accelerator Center, Aruna Asaf Ali Marg,
New Delhi - 110 067, India.
____________________________________________________________________________________________________________________________________
Silicon
nanoclusters formation in pulsed laser deposited (PLD) silicon
suboxide (SiOX) films by thermal annealing is reported. The SiOX
films are prepared by ablation of silicon target at different
oxygen partial pressures. The different deposition conditions are
employed to study the effect of oxygen concentration on the size of
the nanoclusters. Post deposition thermal annealing of the films
leads to the phase separation in silicon suboxide films. Fourier
transform infrared spectroscopy (FTIR), micro Raman spectroscopy
and UV-Vis absorption spectroscopy studies were carried out to
characterize the formation of silicon nanoclusters in
SiOX films.
Total Refs : 24
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010)245-262
Thickness and iodization time dependence of photoluminescence in ultrathin Ag films
M Gnanavel and C S Sunandana
School of Physics, University of Hyderabad, Hyderabad-500 046, India
____________________________________________________________________________________________________________________________________
Silver
thin films in the thickness range 5-15 nm prepared by vacuum
thermal evaporation onto glass substrates were systematically
iodized and carefully characterized by XRD, AFM, UV/Visible optical
absorption and photoluminescence. While the un-iodized Ag films are
X-ray quasi amorphous in keeping with their quasi-continuous nature
and 2D islanded structure, briefly iodized (5-60 minutes) 5, 10,
and 15 nm films showed phases characteristic of both g (zincblende)
and b (Wurtzite) structures perhaps due to local iodine excess
[(Ag/I) < 1] of silver iodide island nanoparticles. Most
interestingly, DFM image of as deposited Ag films revealed uniform
spherical shaped average particles of 25 nm whose size and shape
change appreciably upon iodization. Optical absorption spectra of
uniodized Ag films show surface plasmon resonance (SPR) features
with SPR peak maxima at 430, 439 and 457 nm for the films of
thickness 5, 10 and15 nm, respectively. Finally an interesting and
unique surface plasmon-exciton phase transition is observed as the
ultra-thin films are progressively iodized at 60 minutes. Red shift
observed with increasing iodization time and films thickness which
could be the effect of increasing particle size thereby weak
quantum confinement effects shows the decreases in the band gap.
Photoluminescence of these films are essentially excitonic assisted
by donor-acceptor recombination with rates enhanced by thickness
and particle size reduction also indicating formation of intrinsic
Frenkel defects.
Total Refs : 80
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 263-268
Fabrication and characterization of p-NiO-n-ITO transparent
p-n junction thin film nanostructures
B V Mistry†, P Bhatt#, K H Bhavsar†, S J Trivedi†, U N. Trivedi# and U S Joshi†
†Department of Physics, School of Sciences, Gujarat University, Ahmedabad-380 009, India
#Department of Instrumentation & Control, Vishwakarma Government Engineering College
Chandkheda, Gandhinagar-382 424, India
____________________________________________________________________________________________________________________________________
We have
grown "all oxide" transparent p-n junction thin film
nanostructure device by using chemical solution deposition (CSD)
and e-beam evaporation onto SiO2 substrate. The oxide
p-n junction consisting of p-NiO and
n-ITO was characterized by GIXRD, AFM, UV-Vis.
spectroscopy and I-V measurements. Combined GIXRD and AFM confirm
phase pure, mono-disperse 30 nm NiO and ITO nanocrystallites.
Better than 70% optical transparency is achieved across 160 nm
thick p-n junction. The optical band gap across the
junction was found to decrease as compare to the intrinsic ITO and
NiO. The current voltage (I-V) characteristics show rectifying
nature with dynamic transfer resistance ratio of the order of 103
in the forward bias condition. Very small reverse leakage current
with appreciable beakdown was observed under the reverse bias. The
observed optical and electrical properties of oxide transparent
diode are attributed to the heteroepitaxial nature and carrier
diffusion at the junction interface.
Total Refs : 27
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Asian Journal of Physics Vol. 19, Nos. 2 & 3 (2010) 269-272
ZnO Nanocrystals: Magnetic Study
S Majumdera, V Solankia, A Guptab and Shikha Varmaa
aInstitute of Physics, Bhubaneswar – 751 005, India
bUGC-DAE CSR, Indore Centre, Indore, India.
____________________________________________________________________________________________________________________________________
The present study shows the presence of room temperature ferromagnetism in undoped ZnO nanostructures. The ZnO nanostructures have been deposited by physical vapor deposition technique. The magnetic results demonstrate the presence of asymmetric Kerr loop. Results also indicate that these nanostructures are semiconductive in nature and show a PL of 376nm. The ferromagnetism observed in these crystals may arise from the oxygen vacancies at the surface and interfaces. Keywords: AFM, ZnO, MOKE. PACS: 68.37.Ps, 77.55.hj, 75.75.q
Keywords: AFM, ZnO, MOKE. PACS: 68.37.Ps, 77.55.hj,
75.75.q
Total Refs : 13
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Asian Journal of Physics Vol. 19, No. 2 & 3 (2010) 273-278
Investigation of
SnO2 nanowire based gas
sensors
Niranjan Ramgir, Shashwati Sen, Manmeet Kaur, Satyendra Kumar Mishra, Vallabharao Rikka, Rashmi Choukikar and Kunal Muthe
Thin Films and Devices Section, Technical Physics Division,
Bhabha Atomic Research Centre, Trombay, Mumbai 400 085, India
____________________________________________________________________________________________________________________________________
Gas
sensing characteristics of SnO2 nanowires in two
configurations namely isolated nanowires (Type I) and mat type
nanowires thin films (Type II) have been investigated.
Interestingly, Type I sensor exhibited anomalous behavior on
exposure to Cl2 in that the resistance reduced on
exposure while response of type II sensors showed normal behavior
with increase in resistance. Response to reducing gas,
H2S was found to be normal for both type of sensors.
Results have been understood in terms of different interactions of
chlorine. Temperature dependence of response also showed that
maximum response for Type II sensors occurs at 150°C towards both
reducing (H2S) and oxidizing (Cl2) gases
while type I sensors have good response at room temperature. The
results indicate different behavior of change in resistance of
intragrain and intergrain regions. Isolated SnO2
nanowires are found to be promising for detection of gases at room
temperature.
Total Refs : 14
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Asian Journal of Physics Vol. 19, No. 2 & 3 (2010) 279-286
Electron field emission from Diamond like carbon films deposited by microwave ECR plasma CVD
S B Singh, P Rai, S A Barve, R Kar, Jagannath, M Pandey, R B Tokas, D S Misra and D S Patil*
1Laser and Plasma Technology
Division,
3Technical Physics Division,
4High Pressure and Synchrotron Radiation Physics Division,
5Applied Spectroscopy Division,
Bhabha Atomic Research Center, Trombay, Mumbai 400 085, India.
2Department of Physics, Indian Institute of Technology, Powai, Mumbai, 400 076.
____________________________________________________________________________________________________________________________________
Diamond
like carbon films (DLC) are deposited on Si (111) substrates by
microwave ECR plasma CVD process using plasma of methane and argon
gases. A 13.56 MHz RF generator capacitively coupled to a
water-cooled substrate holder is used to vary the negative dc
self-bias (–25 to –200 V) that is developed on the substrate during
deposition. Deposited films were characterized by Raman
spectroscopy, X ray photoelectron spectroscopy (XPS) and atomic
force microscopy. Field emission characteristics of the deposited
films were investigated. Field emission behavior of the deposited
films is found to be dependent on the substrate bias during the
deposition. It is also observed that the field emission from
the DLC film depends on the sp3/sp2 ratio of carbon bonding,
sp2 cluster size and hydrogen content in the
film.
Total Refs : 19
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Asian Journal of Physics Vol. 19, No. 2 & 3 (2010) 287-300
Magnetron sputtering based x-ray multilayer deposition system at Indus SR facility
M Nayak, P N Rao and G S Lodha
X-ray
Optics Section, Indus Synchrotrons Utilization Division, Raja
Ramanna
Centre for Advanced Technology, Indore-452013,
India
____________________________________________________________________________________________________________________________________
At Indus
synchrotron radiation (SR) facility, we have recently installed a
DC/RF magnetron sputtering system, for the development of large
area x-ray multilayer (ML) optics. A brief description of the
system configuration, automation and operating conditions are
presented. The system has the capability of fabricating large area
(300 100 mm2) x-ray MLs with required accuracy, uniformity and
reproducibility. The sputtering process parameters are optimized
for thin film growth, suitable for fabrication of x-ray multilayer
optics. The representative results on Mo-Si system are
presented.
Total Refs : 22
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